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General Rectifier

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Rectifier Diode A semiconductor device used to convert alternating current into direct current. The most important characteristic of a diode is its unidirectional conductivity. In the circuit, current can only flow from the positive pole of the diode and the negative pole flows out. Usually it contains a PN junction with two terminals, positive and negative. Its structure is shown in the figure. The carriers in the P region are holes, and the carriers in the N region are electrons, forming a certain barrier in the P region and the N region. When the applied voltage makes the P region positive with respect to the N region, the barrier is lowered, and the storage carriers are generated near the two sides of the barrier, which can pass a large current and have a low voltage drop (typically 0.7V), which is called positive. Wizard status. If the opposite voltage is applied, the barrier is increased to withstand a high reverse voltage, and a small reverse current (called reverse leakage current) is called a reverse blocking state. The rectifier diode has significant unidirectional conductivity. The rectifier diode can be fabricated from materials such as semiconductor germanium or silicon. The silicon rectifier diode has a high breakdown voltage, a small reverse leakage current, and good high temperature performance. Usually high-voltage and high-power rectifier diodes are made of high-purity single crystal silicon (it is easy to reverse breakdown when doping more). This device has a large junction area and can pass a large current (up to thousands of amps), but the operating frequency is not high, generally below several tens of kilohertz. Rectifier diodes are mainly used in various low-frequency half-wave rectification circuits. If full-wave rectification is required, they must be connected to a Rectifier Bridge.
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