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Home > Products > N Channel Mosfet > 650V 7A N-Channel Enhancement Mode Field Effect
650V 7A N-Channel Enhancement Mode Field Effect
  • 650V 7A N-Channel Enhancement Mode Field Effect

650V 7A N-Channel Enhancement Mode Field Effect

    Payment Type: T/T
    Incoterm: FOB
    Min. Order: 10 Roll
    Delivery Time: 20 Days

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Basic Info

Model No.: ATM7N65TE

Certification: RoHS, CE, ISO

Shape: Other

Shielding Type: Other

Cooling Method: Other

Function: High Back Pressure Transistor

Working Frequency: Low Frequency

Structure: Planar

Encapsulation Structure: Chip Transistor

Power Level: High Power

Material: Silicon

Additional Info

Packaging: T/R

Productivity: 2KK/M

Brand: AGERTECH

Transportation: Ocean

Place of Origin: CHINA

Supply Ability: MEDIUM

Certificate: ISO9001,ISO16949,ISO14001,ISO18001,QC080000

HS Code: 8541100000

Port: Shenzhen Shekou

Product Description

The ATM7N65TE is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply.

FEATURES:


  • RDS(ON) = 1.4Ω @VGS = 10 V
  • Ultra low gate charge (typical 28 nC )
  • Low reverse transfer Capacitance (CRSS= typical 12 pF )
  • Fast switching capability
  • Avalanche energy tested
  • Improved dv/dt capability, high ruggedness


ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

650

V

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

10

µA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30 V, VDS = 0 V

100

nA

Reverse

VGS = -30 V, VDS = 0 V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =3.5A (Note 4)

1.05

1.4

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0 MHz

950

1430

pF

Output Capacitance

COSS

85

130

pF

Reverse Transfer Capacitance

CRSS

12

18

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD=325V, ID =7A, RG =25Ω (Note 1, 2)

16

ns

Turn-On Rise Time

tR

60

ns

Turn-Off Delay Time

tD(OFF)

80

ns

Turn-Off Fall Time

tF

65

ns

Total Gate Charge

QG

VDS=520V, ID=7A, VGS=10 V (Note 1, 2)

28

42

nC

Gate-Source Charge

QGS

5.5

8.3

nC

Gate-Drain Charge

QGD

11

17

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0V, IS = 7A

1.4

V

Maximum Continuous Drain-Source Diode Forward Current

IS

7

A

Maximum Pulsed Drain-Source Diode Forward Current

ISM

28

A

Reverse Recovery Time

trr

VGS = 0V, IS =7A,

dIF / dt = 100A/μs (Note 1)

365

ns

Reverse Recovery Charge

QRR

4.23

µC

High Voltage N-Channel

Looking for ideal N Channel Mosfet Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the 650V 7A Mosfet are quality guaranteed. We are China Origin Factory of High Voltage N-Channel. If you have any question, please feel free to contact us.

Product Categories : N Channel Mosfet

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