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Home > Products > N Channel Mosfet > 30V 80A N-Channel Enhancement Mode Power MOSFET
30V 80A N-Channel Enhancement Mode Power MOSFET
  • 30V 80A N-Channel Enhancement Mode Power MOSFET

30V 80A N-Channel Enhancement Mode Power MOSFET

    Payment Type: T/T
    Incoterm: FOB
    Min. Order: 10 Roll
    Delivery Time: 20 Days

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Basic Info

Model No.: ATM03N80TE

Certification: RoHS, ISO

Shape: Other

Shielding Type: Other

Cooling Method: Other

Working Frequency: Low Frequency

Structure: Planar

Encapsulation Structure: Plastic Sealed Transistor

Power Level: Medium Power

Material: Silicon

Additional Info

Packaging: T/R

Productivity: 1KK/M

Brand: AGERTECH

Transportation: Ocean

Place of Origin: CHINA

Supply Ability: MEDIUM

Certificate: ISO9001,ISO16949,ISO14001,ISO18001,QC080000

HS Code: 8541100000

Port: Shenzhen Shekou

Product Description

The ATM03N80TE is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The ATM03N80TE meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Features:



  • 100% EAS Guaranteed
  • Green Device Available
  • Super Low Gate Charge
  • Excellent CdV/dt effect decline
  • Advanced high cell density Trench technology


Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

---

---

V

BVDSS/TJ

BVDSS Temperature Coefficient

Reference to 25 , ID=1mA

---

0.028

---

V/

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=30A

---

4.7

5.5

mW

VGS=4.5V , ID=15A

---

7.5

9

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

1.5

2.5

V

VGS(th)

VGS(th) Temperature Coefficient

---

-6.16

---

mV/

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=30A

---

22

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

1.7

3.4

W

Qg

Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=15A

---

20

---

nC

Qgs

Gate-Source Charge

---

7.6

---

Qgd

Gate-Drain Charge

---

7.2

---

Td(on)

Turn-On Delay Time

VDD=15V , VGS=10V , RG=3.3W ID=15A

---

7.8

---

ns

Tr

Rise Time

---

15

---

Td(off)

Turn-Off Delay Time

---

37.3

---

Tf

Fall Time

---

10.6

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

2295

---

pF

Coss

Output Capacitance

---

267

---

Crss

Reverse Transfer Capacitance

---

210

---


N Channel Mosfet TO252



Looking for ideal 30v 80a Mosfet Manufacturer & supplier ? We have a wide selection at great prices to help you get creative. All the N Channel Mosfet TO252 are quality guaranteed. We are China Origin Factory of High Cell Density Trenched N-ch. If you have any question, please feel free to contact us.

Product Categories : N Channel Mosfet

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