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Home > Products > P Channel Mosfet > 20V 4A SOT-23 P-MOS
20V 4A SOT-23 P-MOS
  • 20V 4A SOT-23 P-MOS

20V 4A SOT-23 P-MOS

    Payment Type: T/T
    Incoterm: FOB
    Min. Order: 10 Roll
    Delivery Time: 20 Days

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Basic Info

Model No.: ATM2301APSA

Certification: RoHS, CE, ISO

Shape: Other

Shielding Type: Other

Cooling Method: Naturally Cooled Tube

Function: Switch Transistor

Working Frequency: Low Frequency

Structure: Planar

Encapsulation Structure: Chip Transistor

Power Level: Small Power

Material: Silicon

Additional Info

Packaging: T/R

Productivity: 2KK/M

Brand: agertech

Transportation: Ocean

Place of Origin: china

Supply Ability: formal

Certificate: ISO9001,ISO16949,ISO14001,ISO18001,QC080000

HS Code: 8541100000

Port: Shenzhen Shekou

Product Description

ATM2301APSA is a P-Channel Enhancement Mode Field Effect Transistor with in SOT23 package. The Drain-Source Voltage: -20V and the Drain Current: -4A. The main feature of ATM2301APSA is Trench FET Power MOSFE,Excellent RDS(on) and Low Gate Charge,RDS(ON) < 90mΩ (VGS = -4.5V) and RDS(ON) <110mΩ (VGS = -2.5V). The main application is DC/DC Converter,Load Switch for Portable Devices,Battery Switch.


Absolute maximum ratings (Ta=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID

-4

A

Pulsed Drain Current

IDM

-16

A

Power Dissipation

PD

0.83

W

Thermal Resistance from Junction to Ambient

RθJA

357

/W

Junction Temperature

TJ

150

Storage Temperature

TSTG

-55~ +150


Electrical characteristics (TA=25 oC, unless otherwise noted)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-20



V

Zero gate voltage drain current

IDSS

VDS =-16V,VGS = 0V



-1

µA

Gate-body leakage current

IGSS

VGS =±12V, VDS = 0V



±100

nA

Gate threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.5

-0.7

-1

V

Drain-source on-resistance1)

RDS(on)

VGS = -4.5V, ID = -0.5A


70

90

mΩ

VGS = -2.5V, ID = -0.5A


90

110

Forward transconductance1)

gFS

VDS =-5V, ID =-2A

5



S

Dynamic characteristics2)

Input Capacitance

Ciss

VDS =-10V,VGS =0V,f =1MHz


405


pF

Output Capacitance

Coss


75


Reverse Transfer Capacitance

Crss


55


Gate resistance

Rg

f =1MHz


6


Total Gate Charge

Qg

VDS =-10V,VGS =-2.5V,ID=-3A


3.3

12

nC

Gate-Source Charge

Qgs


0.7


Gate-Drain Charge

Qgd


1.3


Turn-on delay time

td(on)

VDD=-10V,VGEN=-4.5V,ID=-1A RL=10Ω,RGEN=1Ω


11


ns

Turn-on rise time

tr


35


Turn-off delay time

td(off)


30


Turn-off fall time

tf


10


Source-Drain Diode characteristics

Diode Forward voltage

VDS

VGS =0V, IS=-1.25A


-0.7

-1.3

V



Notes:

1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.

2) Guaranteed by design, not subject to production testing.

Field Effect Transistor






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Product Categories : P Channel Mosfet

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