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Home > Products > Schottky Diode > 2A 120V SOD123FL schottky Barrier Rectifier
2A 120V SOD123FL schottky Barrier Rectifier
  • 2A 120V SOD123FL schottky Barrier Rectifier

2A 120V SOD123FL schottky Barrier Rectifier

    Payment Type: T/T
    Incoterm: FOB
    Min. Order: 10 Roll
    Delivery Time: 20 Days

Basic Info

Model No.: DS212W-AT

Encapsulation Structure: Other

Application: Electronic Products

Certification: RoHS, CE, ISO

Luminous Intensity: Standard

Color: Other

Structure: Planar

Material: Silicon

Additional Info

Packaging: T/R

Productivity: 3KK/M

Brand: agertech

Transportation: Ocean

Place of Origin: china

Supply Ability: formal

Certificate: ISO9001,ISO16949,ISO14001,ISO18001,QC080000

HS Code: 8541100000

Port: Shenzhen Shekou

Product Description

DS212W-AT is a 2A 120V surface mount schottky Barrier Rectifier with in the SOD123FL package. Metal silicon junction, majority carrier conductionFor surface mounted applications,Low power loss, high efficiency. High forward surge current capability.For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications



Absolute Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 %

Parameter

Symbols

DS22W

-AT

DS24W

-AT

DS26W

-AT

DS28W

-AT

DS210W

-AT

DS212W

-AT

DS215W

-AT

DS220W

-AT

Units

Maximum Repetitive Peak Reverse Voltage

VRRM

20

40

60

80

100

120

150

200

V

Maximum RMS voltage

VRMS

14

28

42

56

70

84

105

140

V

Maximum DC Blocking Voltage

VDC

20

40

60

80

100

120

150

200

V

Maximum Average Forward Rectified Current

IF(AV)

2.0

A

Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)

IFSM

50

40

A

Max Instantaneous Forward Voltage at 2 A

VF

0.55

0.70

0.85

0.95

V

Maximum DC Reverse Current Ta = 25°C at Rated DC Reverse Voltage Ta =100°C

IR

0.5

5

0.3

3

mA

Typical Junction Capacitance(1)

Cj

220

80

pF

Typical Thermal Resistance(2)

RθJA

85

°C/W

Operating Junction Temperature Range

Tj

-55 ~ +150

°C

Storage Temperature Range

Tstg

-55 ~ +150

°C

(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C

(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.


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